TTC5200 Transistor Full Datasheet

The TTC5200 is a high-power NPN transistor designed for use in audio amplifiers, power amplification, and similar applications. Below is the full datasheet overview of the TTC5200 with key specifications:

Key Specifications:

• Type: NPN Power Transistor
• Package: TO-3
• Maximum Collector-Emitter Voltage (V_CEO): 80V
• Maximum Collector-Base Voltage (V_CBO): 120V
• Maximum Emitter-Base Voltage (V_EBO): 5V
• Maximum Collector Current (I_C): 15A
• Power Dissipation (P_C): 150W
• DC Current Gain (h_FE): 30 to 120 (at V_CE = 10V, I_C = 4A)
• Transition Frequency (f_T): 30 MHz (typical, at V_CE = 20V, I_C = 4A)
• Storage Temperature Range (T_stg): -65°C to +150°C
• Operating Junction Temperature (T_j): 150°C

Electrical Characteristics (at T_j = 25°C):

Thermal Characteristics:

• Thermal Resistance Junction to Case (R_thJC): 1.5°C/W
• Thermal Resistance Junction to Ambient (R_thJA): 60°C/W (depending on heatsink and mounting)
• Maximum Junction Temperature (T_j): 150°C

Mechanical Data:

• Package: TO-3 metal can package, suitable for high-power dissipation applications
• Lead Configuration: Standard TO-3 pinout (Emitter, Base, Collector)

Application Notes:

• The TTC5200 is widely used in high-power audio amplifiers, power supply circuits, and motor control applications, where both high current handling and efficient heat dissipation are required.
• A suitable heat sink must be used to prevent thermal runaway and to maintain safe operating temperatures under load.
• Due to its high current rating and power dissipation, it’s typically paired with complementary PNP transistors for push-pull audio amplification circuits.

Important:

Always refer to the official datasheet for specific guidelines related to layout, mounting, and thermal design when incorporating the TTC5200 into your circuit.

You can typically find the full datasheet and additional details on various semiconductor distributor websites or in technical datasheet repositories online.